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L-Band Radar Pulsed Power Transistor PACKAGE PACKAGE 1200-1400 MHz, 200s Pulse, 10% Duty TheDESCRIPTION HVV1214-075 device is a high high high power power HVV1214-075 device is a high The voltage silicon enhancement mode RF transistor PACKAGE voltage silicon enhancement mode RF for Ground Based Radar Applications transistor
designed for L-Band pulsed radar applications designed for L-Band pulsed radar applications DESCRIPTION The high power HVV1214-075 device is a high operating over over the frequency range from the operating voltage silicon enhancement mode RF transistor DESCRIPTIONfrequency range from 1.2GHz to 1.4GHz. 1.2GHz to L-Band designed for 1.4GHz. pulsed radar applications The high power HVV1214-075 device is a high operating overHVV1214-075 devicerange from the frequency is high voltage voltage power The high silicon enhancement mode RF atransistor 1.2GHz to 1.4GHz. FEATURES L-Bandmode RF transistor designed for designed for FEATURES silicon enhancement pulsed radar applications operating over the frequency range from L-Band pulsed radar applications operating over the 1.2GHz to 1.4GHz. FEATURES from 1.2GHz High High Gain Power frequency range Power Gain to 1.4GHz. Excellent Ruggedness Excellent Ruggedness 48V Supply Gain FEATURES Voltage High Power 48V Supply Voltage FEaTURES Excellent Ruggedness 48V Supply Gain High MAXIMUM ABSOLUTE Power Voltage RATINGS * High Power Gain ABSOLUTE Ruggedness RATINGS MAXIMUM Excellent * Excellent Ruggedness 48V Supply Voltage ABSOLUTE MAXIMUM RATINGS * 48V Parameter Symbol Supply Voltage Value Symbol Parameter ValueUnit Unit VABSOLUTE MAXIMUM Voltage 105 V Drain-Source Voltage 105 DSS V Drain-Source RATINGS V DSS VGS aBSOLUTE MaXIMUM 10 10 V Symbol Gate-Source Voltage Parameter Unit RaTINGS V VGS Gate-Source VoltageValue IDSX I Drain Current Voltage 81058 A VDSS Drain-Source VA Drain Current DSX 2 Symbol Gate-Source Voltage 250 Parameter Value Unit V PDVGSP 2 Power Dissipation Power Dissipation 10 250 W W D Drain-Source 105 95 Drain Temperature 8 A TSIVDSS StorageCurrent Voltage -65 to toV C DSX T Storage Temperature -65 C 2S V Gate-Source Voltage +200 10 PDGS Power Dissipation 250+200 V W IDSX Drain 8 A Storage Temperature 200 200 C C -65 to C TJTS T JunctionCurrent Junction PD2 J Power Dissipation 250 W +200 Temperature Temperature T Storage -65 C TJ S Junction Temperature 200 to +200 Temperature TJ Junction 200 C Temperature
DESCRIPTION DESCRIPTION
HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075MHz, 200s Pulse, 10% Duty 1200-1400 MHz, 200s Pulse, 10% Duty 1200-1400 The innovative Semiconductor Company!Pulsed Power Transistor L-Band Radar HVV1214-075 200s Pulse, 10% Duty 1200-1400 MHz, HVV1214-075 PRODUCT OVERVIEW L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty
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The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company!
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THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMaL CHaRaCTERISTICS Unit Unit THERMAL Parameter Symbol Parameter Max Max Symbol CHARACTERISTICS
Typ Typ Units Units 110 110 V 102 UnitsV BR(DSS) Symbol Parameter Conditions Typ IDSS I Drain Leakage Current VGS=0V,VDS=48V <10 <10 A A Drain Leakage Current VGS=0V,VDS=48V DSS VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 <80 V IGSS I GateGate Leakage Current Leakage VGS=5V,VDS=0V <1 A Symbol Parameter Current Conditions Typ <1 Units A VGS=5V,VDS=0V IDSS GSS Drain Leakage Current VGS=0V,VDS=48V <10 A GP1 BR(DSS) Power Gain Gain PVGS=0V,ID=1mA 21 dB VG1 Drain-Source Breakdown OUT=75W,F=1200MHz,1400MHz Power POUT=75W,F=1200MHz,1400MHz 110 21 VA dB IGSS P Gate Leakage Current VGS=5V,VDS=0V <1 IRL11IRL1 Input Return Loss Loss PVGS=0V,VDS=48V 9 dB IDSS Drain Leakage Current <10 A OUT=75W,F=1200MHz,1400MHz Input Return GP Power Gain POUTPOUT=75W,F=1200MHz,1400MHz 21 9 =75W,F=1200MHz,1400MHz dB dB 1 IGSS 1 Gate Leakage <1 44 A Drain Efficiency Current PVGS=5V,VDS=0V =75W,F=1200MHz,1400MHz 44 %% D OUT 1 Drain Efficiency IRL1 D Input Return Loss POUTPOUT=75W,F=1200MHz,1400MHz 9 =75W,F=1200MHz,1400MHz dB 1 Power Gain =75W,F=1200MHz,1400MHz PDG1PD1 Pulse Droop PPOUTP =75W,F=1200MHz,1400MHz 21 <0.6dB <0.6 dB P OUT=75W,F=1200MHz,1400MHz Pulse Droop OUT Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 % dB D1 IRL Input Return Loss POUT=75W,F=1200MHz,1400MHz 9 dB 1 PD 1 Pulse Droop P =75W,F=1200MHz,1400MHz <0.6 dB Drain Efficiency P OUT=75W,F=1200MHz,1400MHz at VDD = 48V, IDQ 44 % 1.) Under Pulse Conditions: Pulse Width = 200sec, Pulse DutyDuty Cycle = 10% at VDD = 48V, = 50mA D 1.) Under Pulse Conditions: Pulse Width = OUT 200sec, Pulse Cycle = 10% IDQ = 50mA 1 1 Under at T Conditions: Pulse PD Pulse Droop POUT=75W,F=1200MHz,1400MHz <0.6 dB 2.) RatedPulseCASET= 25C25C Width = 200sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 1.)2.) Rated at Conditions: Pulse Width = 200sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA Under Pulse CASE = 2 Rated at TCASE = 25C 2.) Rated at TCASE = 25C Pulse Width = 200sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 1.) Under Pulse Conditions:
2.) Rated at TCASE = 25C
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HVVi Semiconductors, Inc. Inc. HVVi Semiconductors, st HVVi Semiconductors, Inc. 10235 S.Semiconductors, Inc. 10235 51st St. 100 HVVi 51 S.St. Suite Suite 100 10235 S. 51st St. Phoenix,S. 5185044Suite 100 10235 Az. stAz. Suite 100 Phoenix, St. 85044 HVVi Semiconductors, Inc. Phoenix, AZ. 85044 Phoenix, Az.st85044 100 10235 S. 51 St. Suite Phoenix, Az. 85044
ELECTRICAL CHARACTERISTICS Symbol Conditions Symbol Parameter Parameter Conditions ELECTRICAL CHARACTERISTICSVGS=0V,ID=1mA 3mA VBR(DSS) Drain-Source Breakdown V Drain-Source Breakdown VGS=0V,ID=1mA
1 1 Thermal Resistance 0.70 C/W JC THERMALThermal Resistance Max0.70 UnitC/W CHARACTERISTICS Symbol Parameter 1 Thermal Resistance 0.70 C/W JC Symbol Parameter Max Unit 1 ELECTRICAL CHARACTERISTICS C/W Thermal Resistance 0.70 JC ELECTRICAL CHARACTERISTICS
m
in
Symbol LMT1
ar
ToleranceOUT Parameter Test Condition Mismatch F = 1400MHz Load Tolerance POUT = 75W Mismatch F = 1400MHz Tolerance
Max 20:1
The device resides in a two-lead metal flanged The device resides in a two-lead metal flanged package with with crystal polymer lid. lid. package liquidtwo-lead metal flanged The polymer package TheHV400 packagein a liquid crystal metal flanged The device resides style is two-lead for gross leak The HV400 resides instyle is qualified for gross leak device package a qualified withpackage with polymer lid. The HV400 lid. Test style liquid crystal liquid crystal Method package test test - MIL-STD-750D, polymer 1071.6, Test - MIL-STD-750D, Method 1071.6, The Condition C. C. leak test - MIL-STD-750D,leak HV400 for gross qualified for gross Method The device resides in is qualified package styleaistwo-lead metal flanged Condition test - with liquid package MIL-STD-750D, Method 1071.6, Test 1071.6, Test Condition C. crystal polymer lid. The HV400 package style is qualified for gross leak Condition C. RUGGEDNESS Method 1071.6, Test test -RUGGEDNESS MIL-STD-750D, Condition C. RUGGEDNESS RUGGEDNESS device is capable of The The HVV1214-075 HVV1214-075 capable Thewithstanding deviceoutputdevice withstanding an HVV1214-075 an is capable of ismismatch of load load mismatch withstanding an RUGGEDNESS 20:1 output over20:1 phase over output load mismatch a to device VSWR overVSWR The corresponding HVV1214-075 a 20:1 is a all corresponding to corresponding tocapable allof VSWR phase withstanding angles and and anoutput power and mismatch operating all phaseangles rated angles and ratedoutput power and operating ratedoutput load output power and operating The HVV1214-075 20:1 frequency band of is capable corresponding across device frequency phase to voltage voltage frequency VSWR over all band voltage acrossacross athe the load mismatchof of the an output withstandingrated outputband of operation. angles and power and operating operation. operation. corresponding to a the VSWR over all phase 20:1 frequency band of voltage across Test Condition Symbol Parameter Max MaxUnits Units Symbol angles and Parameter Test Condition operating power and operation. rated output 75W LMT1 LMT1 Load Load POUT = 20:1 20:1 VSWR VSWR OUT = 75W voltage across the Pfrequency band of Symbol Mismatch Parameter Test Condition Max Units Mismatch = 1400MHz F operation. 1 F 75W = 1400MHz 20:1 Tolerance LMT Load P = VSWR
Units VSWR
ELECTRICaL CHaRaCTERISTICS
For additional information, visit: visit: www.hvvi.com For additional information, www.hvvi.com For additional information: HVVi Semiconductors, Inc. Confidential HVVi Semiconductors, www.hvvi.com For additional information, visit:Inc. Confidential Tel:HVVi 429-HVVi (4884) or visit www.hvvi.com (866) Semiconductors, Inc. (c) 2008 2008 HVVi Semiconductors,All Rights Reserved. (c) HVVi Semiconductors, Inc. Confidential Reserved. For HVVi Semiconductors, Inc. Inc. All Rights www.hvvi.com (c) 2008 additional information, visit:All Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. Confidential HVVi Semiconductors, Inc. All Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
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EG-01-PO08X1 EG-01-PO08X1 EG-01-PO08X4 5/23/08 5/23/08 EG-01-PO08X1 10/13/08 1 5/23/08 EG-01-PO08X11 1 5/23/08 1 1
PACKAGE PaCKaGE
The innovative Semiconductor Company! HVV1214-075 PRODUCT OVERVIEW
TM
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty for Ground Based Radar Applications
PaCKaGE DIMENSIONS
DraIN
GaTE SOUrCE
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO08X4 10/13/08 2

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